Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference39 articles.
1. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
2. Structural instability of 4H–SiC polytype induced by n-type doping
3. Formation and properties of stacking faults in nitrogen-doped 4H-SiC
4. Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport
5. Increase of SiC Substrate Resistance Induced by Annealing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29
2. Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer;Solid-State Electronics;2021-06
3. Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions;Journal of Applied Physics;2019-02-28
4. Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate;Japanese Journal of Applied Physics;2019-01-08
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