Structural relaxation and stress reduction in hydrogenated silicon oxide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361111
Reference8 articles.
1. Formation of stress reduced silicon oxide films by Ar/H2sputtering method
2. Optimization of Fabrication Parameters for Ge-Based Laminated Polarizer
3. Stress Measurements of Thermally Grown Thin Oxides on (100) Si Substrates
4. Effect of rf power on remote‐plasma deposited SiO2 films
5. Optical properties of laser-deposited a-Ge films: a comparison with sputtered and e-beam-deposited films
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1. Synthesis of yttrium silicates by annealing r.f. sputtered glassy coatings;Vacuum;2014-03
2. Structural relaxation in sputter-deposited silica glass;Journal of Non-Crystalline Solids;2006-07
3. The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition;Thin Solid Films;2000-12
4. Evolution of residual stress in plasma-enhanced chemical-vapor-deposited silicon dioxide film exposed to room air;Applied Physics Letters;1999-12-13
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