The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Published:2000-12 Issue:1-2 Volume:379 Page:259-264
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim S.P.,Choi S.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. S. Wolf, Silicon Processing for VLSI Era, Vol. 2, Lattice Press, Sunset Beach, CA, 1990.

2. Microelectronics Packaging Handbook;Tummala,1989

3. Plasma Enhanced Chemical Vapor Deposition and Characterization of Fluorine Doped Silicon Dioxide Films

4. Analysis of structural changes in plasma-deposited fluorinated silicon dioxide films caused by fluorine incorporation using ring-statistics based mechanism

5. Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide

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