Strain investigation of PECVD passivation layer for ferroelectric domain wall random access memory-Reference-Cited by-同舟云学术

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Strain investigation of PECVD passivation layer for ferroelectric domain wall random access memory

Published:2023-10 Issue: Volume:960 Page:170767
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Hu Xiaobing,Chen Hao,Tian Dongxia^ORCID,Niu Xiaorong,Chai Xiaojie,Sang Shengbo

Funder

Basic Research Programs of Sichuan Province

Natural Science Foundation for Young Scientists of Shanxi Province

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. Functional domain walls in multiferroics;Meier;J. Phys. Condens. Matter,2015

2. Physics and applications of charged domain walls;Bednyakov;Npj Comput. Mater.,2018

3. Functional ferroic domain walls for nanoelectronics;Sharma;Materials,2019

4. Conduction at domain walls in oxide multiferroics;Seidel;Nat. Mater.,2009

5. Nonvolatile ferroelectric domain wall memory;Sharma;Sci. Adv.,2017

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