Effect of rf power on remote‐plasma deposited SiO2 films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353961
Reference16 articles.
1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
2. Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces
3. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition
4. Electron cyclotron resonance plasma stream source for plasma enhanced chemical vapor deposition
5. Atomic structure in SiO2 thin films deposited by remote plasma‐enhanced chemical vapor deposition
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