Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts-Reference-Cited by-同舟云学术

Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Published:2016-10-04 Issue:13 Volume:120 Page:135303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Walsh Lee A.¹,Weiland Conan²,McCoy Anthony P.¹,Woicik Joseph C.²,Lee Rinus T. P.³,Lysaght Pat³,Hughes Greg¹

Affiliation:

1. Department of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland

2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA

3. SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203, USA

Funder

Science Foundation Ireland (SFI)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4964251

Reference20 articles.

1. Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

2. Y. T. Chen , J. Huang , J. Price , P. Lysaght , D. Veksler , C. Weiland , J. C. Woicik , G. Bersuker , R. Hill , J. Oh , P. D. Kirsch , R. Jammy , and J. C. Lee , “ III–V gate stack interface improvement to enable high mobility 11 nm node CMOS,” in 2012 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) (2012), pp. 1–2.

3. J. Huang , N. Goel , P. Lysaght , D. Veksler , P. Nagaiah , S. Oktyabrsky , J. Price , H. Zhao , Y. T. Chen , J. C. Lee , J. C. Woicik , P. Majhi , P. D. Kirsch , and R. Jammy , “ Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality,” in 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2011), pp. 1–2.

4. Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces

5. Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling;Journal of Applied Physics;2022-07-14

2. Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins;IEEE Transactions on Electron Devices;2021-10

3. NIST HAXPES at NSLS and NSLS-II;Synchrotron Radiation News;2018-07-04

4. Scaling Challenges for Advanced CMOS Devices;International Journal of High Speed Electronics and Systems;2017-02-17