Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3524262
Reference19 articles.
1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
3. III-V compound semiconductor devices: Optical detectors
4. Observation of charge-sharing in an HPGe double-sided strip detector
5. Advances in germanium detector technology
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