Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3187803
Reference19 articles.
1. Silicon CMOS devices beyond scaling
2. Device scaling limits of Si MOSFETs and their application dependencies
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4. Sub-50 nm P-channel FinFET
5. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
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1. Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme;Journal of Applied Physics;2017-06-28
2. Hole Transconductance of [100] Long-Channel Si Nanowire Transistor;Journal of Electronic Materials;2016-07-29
3. Theoretical interpretation of the electron mobility behavior in InAs nanowires;Journal of Applied Physics;2014-11-07
4. Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors;Nano Letters;2011-11-29
5. Quantum Confinement Induced Performance Enhancement in Sub-5-nm Lithographic Si Nanowire Transistors;Nano Letters;2011-03-04
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