Theoretical interpretation of the electron mobility behavior in InAs nanowires-Reference-Cited by-同舟云学术

Theoretical interpretation of the electron mobility behavior in InAs nanowires

Published:2014-11-07 Issue:17 Volume:116 Page:174505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Marin E. G.¹,Ruiz F. G.¹,Godoy A.¹,Tienda-Luna I. M.¹,Martínez-Blanque C.¹,Gámiz F.¹

Affiliation:

1. Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada, Spain

Funder

Universidad de Granada. CEI-BioTIC

Consejería Economía, Innovación, Ciencia y Empleo, Junta de Andalucia (Ministry of Economy, Innovation, Science and Employment, Government of Andalucia)

Ministerio de Economía y Competitividad (Ministry of Economy and Competitiveness)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900980

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4. Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs

5. Diameter-Dependent Electron Mobility of InAs Nanowires

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