Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y2O3/HfO2 layers-Reference-Cited by-同舟云学术

Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y2O3/HfO2 layers

Author:

Li Tong¹²³⁴⁵,Shen Rui¹²³⁴⁵,Sun Mei¹²³⁴⁵,Pan Dong⁶⁷⁸⁹⁵^ORCID,Zhang Jingmin¹⁰¹¹³⁴⁵,Xu Jun¹⁰¹¹³⁴⁵,Zhao Jianhua⁶⁷⁸⁹⁵,Chen Qing¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices

2. Department of Electronics

3. Peking University

4. Beijing 100871

5. China

6. State Key Laboratory of Superlattices and Microstructures

7. Institute of Semiconductors

8. Chinese Academy of Sciences

9. Beijing 100083

10. Electron Microscopy Laboratory

11. School of Physics

Abstract

Y₂O₃/HfO₂ layers improve the electrical properties of InAs NW devices by modifying the interface between InAs and the dielectric layer.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference48 articles.

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