Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors
Author:
Affiliation:
1. Department of Physics, Pusan National University, Busan 609-735, Korea
2. Department of Nanobio Materials and Electronics, World Class University, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl203238e
Reference33 articles.
1. Low-temperature electron mobility in Trigate SOI MOSFETs
2. A silicon quantum wire transistor with one-dimensional subband effects
3. Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET
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