Photosensitivity of InZnO thin-film transistors using a solution process-Reference-Cited by-同舟云学术

Photosensitivity of InZnO thin-film transistors using a solution process

Published:2016-09-26 Issue:13 Volume:109 Page:132105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Jongwon¹,Park Junghak²,Lim Keon-Hee¹,Cho Nam-kwang¹^ORCID,Lee Jinwon¹,Jeon Sanghun²^ORCID,Kim Youn Sang¹³

Affiliation:

1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742, South Korea

2. Department of Applied Physics, Korea University, Sejongro 2511, Sejong 339-700, South Korea

3. Advanced Institute of Convergence Technology, Gyeonggi-do 443-270, South Korea

Funder

advabced soft electronics as global frontier research program

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963881

Reference23 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Transparent thin-film transistors with zinc indium oxide channel layer

3. Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes

4. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

5. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

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