AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4831688
Reference20 articles.
1. (Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors
2. B. De Jaeger, M. Van Hove, D. Wellekens, X. Kang, H. Liang, G. Mannaert, K. Geens, and S. Decoutere, in 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2012), pp. 49–52.
3. Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films
4. Optical pump-and-probe measurement of the thermal conductivity of nitride thin films
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