Author:
Zanoni Enrico,Meneghesso Gaudenzio,Meneghini Matteo,Stocco Antonio,Rampazzo Fabiana,Silvestri Riccardo,Rossetto Isabella,Ronchi Nicolò
Abstract
Main failure modes of AlGaN/GaN HEMTs can be divided into three main categories: 1) Catastrophic increase of gate leakage, accompanied by an increase in trap density which closely resembles time dependent dielectric breakdown effects of MOS structures; 2) hot-electrons and trap-induced effects, which induce increase in parasitic drain resistance and threshold voltage shifts; 3) thermally-activated degradation of drain current, which has been observed especially during long-term accelerated tests, with a very wide range of activation energies, from 1.05 eV to 2.47 eV. In the following, some recent results concerning these three failure modes are presented, together with some hypothesis on the degradation mechanisms involved.
Publisher
The Electrochemical Society
Cited by
5 articles.
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