The Effect of Aluminum Fraction on the Phonon Mean Free Path - Thermal Conductivity Relation of Al<sub>x</sub>Ga<sub>1-x</sub>N Alloys-Reference-Cited by-同舟云学术

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The Effect of Aluminum Fraction on the Phonon Mean Free Path - Thermal Conductivity Relation of Al_xGa_1-xN Alloys

Published:2023-05-30 Issue: Volume: Page:
ISSN:
Container-title:2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
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Author:

Ghanizadeh Pegah¹,Donmezer Nazli¹

Affiliation:

1. Bogazici University,Department of Mechanical Engineering,Bebek, Istanbul,Turkey,34342

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10177286/10177494/10177666.pdf?arnumber=10177666

Reference45 articles.

1. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

2. Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

3. Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

4. Distributions of phonon lifetimes in Brillouin zones

5. Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials

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