Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness-Reference-Cited by-同舟云学术

Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

Published:2020-12-21 Issue:25 Volume:117 Page:252102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tran Dat Q.¹²^ORCID,Delgado-Carrascon Rosalia¹²^ORCID,Muth John F.³,Paskova Tania³^ORCID,Nawaz Muhammad²⁴,Darakchieva Vanya¹²⁵^ORCID,Paskov Plamen P.¹²³^ORCID

Affiliation:

1. Department of Physics, Chemistry, Biology, Linköping University, 581 83 Linköping, Sweden

2. Center for III-Nitride Technology, C3NiT-Janzen, Linköping University, 581 83 Linköping, Sweden

3. Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695, USA

4. Hitachi ABB Power Grids, Power Grid Research, Forskargränd 7, 721 78 Västerås, Sweden

5. THz Materials Analysis Center (TheMAC), Linköping University, 581 83 Linköping, Sweden

Funder

Vetenskapsrådet

VINNOVA

Swedish Foundation for Strategic Research

Linkoping University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0031404

Reference40 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. An assessment of wide bandgap semiconductors for power devices

3. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)

4. Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

5. High p-type conduction in high-Al content Mg-doped AlGaN

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