Ion‐induced secondary electron emission in SiH4glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353070
Reference17 articles.
1. a-Si:H Deposition from SiH4and Si2H6rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition
2. Spatially resolved optical emission and electrical properties of SiH4RF discharges at 13.56 MHz in a symmetric parallel-plate configuration
3. Study of the structure in rf glow discharges in SiH4/H2by spatiotemporal optical emission spectroscopy: Influence of negative ions
4. Plasma and surface reactions during a-Si:H film growth
5. Transition between different regimes of rf glow discharges
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