Absolute fluorine atom concentrations in fluorocarbon plasmas determined from CF2 loss kinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371940
Reference25 articles.
1. CFx radical production and loss in a CF4 reactive ion etching plasma: Fluorine rich conditions
2. CF2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization
3. High mass positive ions and molecules in capacitively-coupled radio-frequency CF4 plasmas
4. Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density
5. Anisotropic etching of SiO2in low‐frequency CF4/O2and NF3/Ar plasmas
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4. Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology;Journal of Vacuum Science & Technology A;2019-12
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