Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1402155
Reference14 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
3. Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasers
4. Optical gain for wurtzite GaN with anisotropic strain in c plane
5. Many-body optical gain of (101̄0) wurtzite GaN/AlGaN quantum-well lasers
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1. In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region;IEEE Photonics Technology Letters;2009-07
2. Laser emission from GaN photonic crystals;Applied Physics Letters;2006-08-14
3. GaN-based stacked micro-optics system;Applied Optics;2006-04-10
4. In-plane optical anisotropy in InxGa1−xN∕GaN multiple quantum wells induced by Pockels effect;Applied Physics Letters;2005-01-03
5. Gratings in GaN Membranes;Japanese Journal of Applied Physics;2004-08-25
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