Many-body optical gain of (101̄0) wurtzite GaN/AlGaN quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334911
Reference16 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation
4. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
5. Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
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1. Effect of uniaxial compressive stress with different orientations on the hole mobility of wurtzite GaN heterojunction quantum well;AIP Advances;2022-07-01
2. Effects of built-in fields on the optical gain in a CdO/ZnO quantum dot with the Smorodinsky–Winternitz potential;Journal of Nanophotonics;2019-07-19
3. Crystal orientation effects on electronic and optical properties of wurtzite ZnO/CdZnO quantum well lasers;Superlattices and Microstructures;2014-11
4. Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers;Optical and Quantum Electronics;2007-01-16
5. Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures;Applied Physics Letters;2007-01
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