Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110540
Reference4 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Field‐effect transistor structure based on strain‐induced polarization charges
3. Piezoelectric effects in strained‐layer superlattices
4. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy
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