Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365951
Reference14 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. First-principles calculations of effective-mass parameters of AlN and GaN
3. Valence subband structures of wurtzite GaN/AlGaN quantum wells
4. Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
5. Valence subband structures of (101̄0)-GaN/AlGaN strained quantum wells calculated by the tight-binding method
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