Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells-Reference-Cited by-同舟云学术

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Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells

Published:1996-12-01 Issue:Part 2, No. 12A Volume:35 Page:L1566-L1568
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohtoshi Tsukuru,Niwa Atsuko,Kuroda Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs;Topics in Applied Physics;2017

2. Optical Emission Characteristics of Pseudopolarization-Matched Green AlInGaN/InGaN Quantum Well Structures;IEEE Journal of Selected Topics in Quantum Electronics;2013-09

3. Nonpolar and semipolar GaN, optical gain and efficiency;SPIE Proceedings;2013-03-04

4. Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs;Topics in Applied Physics;2013

5. Theory of non-polar and semi-polar nitride semiconductor quantum-well structures;Semiconductor Science and Technology;2012-01-19

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