Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
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Springer Netherlands
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http://link.springer.com/content/pdf/10.1007/978-94-007-5863-6_5
Reference120 articles.
1. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki, Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−x Al x N (0
2. I. Akasaki, H. Amano, Breakthroughs in improving crystal quality of GaN and invention of the p–n junction blue-light-emitting diode. Jpn. J. Appl. Phys. 45(12), 9001–9010 (2006)
3. S. Nakamura, T. Mukai, M. Senoh, Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64(13), 1687 (1994)
4. S. Nakamura, M. Senoh, N. Iwasa, S.-i. Nagahama, High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn. J. Appl. Phys. 34(7), L797–L799 (1995)
5. P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K.H. Ploog, Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865 (2000)
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