Growth and characterization of AlGaN∕GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2909188
Reference23 articles.
1. 1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz
2. Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
3. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
4. Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
5. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
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1. Characterization of AlGaN/GaN high electron mobility transistors on GaN substrates with different thicknesses of GaN channel and buffer layers using side-gate modulation;Japanese Journal of Applied Physics;2021-12-15
2. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities;Power Electronics and Power Systems;2016-09-09
3. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs;Microelectronics Reliability;2015-08
4. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE;Micron;2015-06
5. The convergence of longitudinal excitons onto the Γ5transverse exciton in GaN and the thermal activation energy of longitudinal excitons;Journal of Physics: Condensed Matter;2013-07-24
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