Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2719618
Reference23 articles.
1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
2. Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films
3. Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications
4. Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors
5. Metallorganic Chemical Vapor Deposition of Sr-Ta-O and Bi-Ta-O Films for Backend Integration of High-k Capacitors
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