Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors-Reference-Cited by-同舟云学术

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Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors

Published:2013-11-01 Issue:6 Volume:8 Page:1481-1486
ISSN:1975-0102
Container-title:Journal of Electrical Engineering and Technology
language:en
Short-container-title:Journal of Electrical Engineering and Technology

Author:

Samuel T.S.Arun,Balamurugan N.B.,Sibitha S.,Saranya R.,Vanisri D.

Publisher

The Korean Institute of Electrical Engineers

Subject

Electrical and Electronic Engineering

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kiee/JAKO201333363221937.pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization and performance indication of surrounding gate tunnel field‐effect transistors based on machine learning;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-05

2. Analytical Modeling for Electrical Characteristics of Source Pocket-Based Hetero Dielectric Double-Gate TFETs;Silicon;2023-11-14

3. Potential Analysis of Double Gate Vertical TFET Using 2-D Modeling for Low Power Application;Transactions on Electrical and Electronic Materials;2023-06-16

4. A Non-linear Circuit Model For Silicon Tunnel Field-Effect Transistors;Journal of Electronic Materials;2023-05-05

5. Enhancement of Double Gate Tunnel Field Effect Transistor Structures with Different Variable Parameters;2023 7th International Conference on Computing Methodologies and Communication (ICCMC);2023-02-23

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