Analytical Modeling for Electrical Characteristics of Source Pocket-Based Hetero Dielectric Double-Gate TFETs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02754-3.pdf
Reference48 articles.
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3. Bhuwalka KK, Schulze J, Eisele I (2005) Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering. IEEE Trans Electron Devices 52(5):909–917
4. Verhulst AS, Vandenberghe WG, Maex K, Groeseneken G (2007) Tunnel field-effect transistor without gate-drain overlap. Appl Phys Lett 91(5):053102–1–053102–3
5. Krishnamohan T, Kim D, Raghunathan S, Saraswat K (2008) Double gate strained-ge heterostructure tunneling FET (TFET) With record high drive currents and 60mV/dec subthreshold slope. IEDM Tech Dig, pp 1–3
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1. Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications;Physica Scripta;2024-06-13
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