A Non-linear Circuit Model For Silicon Tunnel Field-Effect Transistors-Reference-Cited by-同舟云学术

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A Non-linear Circuit Model For Silicon Tunnel Field-Effect Transistors

Published:2023-05-05 Issue:7 Volume:52 Page:4971-4978
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Lenus C. Reeda,Haris M.^ORCID,Rani C. Sheeja Herobin,Samuel T. S. Arun,Ajayan J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-023-10447-1.pdf

Reference27 articles.

1. Z. Wang, L. Ye, Q. Huang, K. Du, Z. Tan, Y. Wang, and R. Huang, IEEE Trans. Circuits Syst. I Regul. Pap. 68, 1160 (2021).

2. K. Sucheta Singh, S. Kumar, K. Nigam, and VA. Tikkiwal, International Conference on Signal Processing and Communication (ICSC), 286 (2019).

3. B. Goswami, A. Bhattacharya, K. Kumari, P. Das, W. Reja, and SK. Sarkar, 14th Conference on Industrial and Information Systems (ICIIS), (2019).

4. S. Ahmad, N. Alam, and M.Hasan, International Conference on Electron Devices and Solid-State Circuits (EDSSC), 1 (2017).

5. J. Li, Q. Xie, A. Huang, and Z. Wang , IEEE 3rd International Conference on Electronics Technology (ICET), 20 (2020).

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