Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi-Reference-Cited by-同舟云学术

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Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

Published:2014-01-13 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Mazzucato Simone,Lehec Henri,Carrère Helene,Makhloufi Hajer,Arnoult Alexandre,Fontaine Chantal,Amand Thierry,Marie Xavier

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-9-19.pdf

Reference19 articles.

1. Petropoulos JP, Zhong Y, Zide JMO: Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material. Appl Phys Lett 2011, 99(1–3):031110.

2. Sweeney SJ, Jin SR: Bismide-nitride alloys: promising for efficient light emitting devices in the near- and mid-infrared. J Appl Phys 2013, 113(1–6):043110.

3. Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ, David JPR: Absorption characteristics of GaAs1−xBi x /GaAs diodes in the near-infrared. Photon Technol Lett 2012, 24: 2191–2194.

4. Fluegel B, Francoeur S, Mascarenhas A, Tixier S, Young EC, Tiedje T: Giant spin-orbit bowing in GaAs1−xBi x . Phys Rev Lett 2006, 97(1–4):067205.

5. Alberi K, Dubon OD, Walukiewicz W, Yu KM, Bertulis K, Krotkus A: Valence band anticrossing in GaBi x As1−x. Appl Phys Lett 2007, 91(1–3):051909.

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