Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE-Reference-Cited by-同舟云学术

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Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

Published:2014-05-01 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Chen Wei-Chun,Wu Yue-Han,Peng Chun-Yen,Hsiao Chien-Nan,Chang Li

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-9-204.pdf

Reference30 articles.

1. Yamamoto A, Sugita K, Bhuiyan AG, Hashimoto A, Narita N: Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells. Mater Renew Sustain Energy 2013, 2: 10.

2. Yamamoto A, Islam MR, Kang TT, Hashimoto A: Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells. Phys Stat Sol (c) 2010, 7: 1309–1316. 10.1002/pssc.200983106

3. Kim HJ, Choi S, Kim SS, Ryou JH, Yoder PD, Dupuis RD, Fischer AM, Sun K, Ponce FA: Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes. Appl Phys Lett 2010, 96: 101102–101104. 10.1063/1.3353995

4. Ferhat M, Bechstedt F: First-principles calculations of gap bowing in InxGa1-xN and InxAl1-xN alloys: relation to structural and thermodynamic properties. Phys Rev B 2002, 65: 075213–075219.

5. Matsuoka T: Calculation of unstable mixing region in wurtzite In1-x-yGaxAlyN. Appl Phys Lett 1997, 71: 105–107. 10.1063/1.119440

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