Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes-Reference-Cited by-同舟云学术

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Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Published:2010-03-08 Issue:10 Volume:96 Page:101102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Hee Jin,Choi Suk,Kim Seong-Soo,Ryou Jae-Hyun,Yoder P. Douglas,Dupuis Russell D.,Fischer Alec M.,Sun Kewei,Ponce Fernando A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3353995

Reference16 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. Effect of thermal annealing induced by p-type layer growth on blue and green LED performance

4. Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers

5. Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature

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1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12

2. Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers;Micro and Nanostructures;2024-07

3. Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures;AIP Advances;2024-04-01

4. Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency;Crystals;2023-11-23

5. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26

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