Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing-Reference-Cited by-同舟云学术

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Published:2013-05-17 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Lai Fang-I,Yang Jui-Fu

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-8-244.pdf

Reference26 articles.

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2. Schubert EF: Light-Emitting Diodes. Cambridge: Cambridge University Press; 2003.

3. Huh C, Lee KS, Kang EJ, Park SJ: Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface. J Appl Phys 2003, 93: 9383–9385. 10.1063/1.1571962

4. Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SP, Nakamura S: Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett 2004, 84: 855–857. 10.1063/1.1645992

5. Hong HG, Kim SS, Kim DY, Lee T, Song O, Cho JH, Sone C, Park Y, Seong TY: Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes. Semicond Sci Technol 2006, 21: 594–597. 10.1088/0268-1242/21/5/004

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