Scanning tip measurement for identification of point defects-Reference-Cited by-同舟云学术

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Scanning tip measurement for identification of point defects

Published:2011-02-14 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Dózsa László,Molnár György,Raineri Vito,Giannazzo Filippo,Ferencz János,Lányi Štefan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-140.pdf

Reference14 articles.

1. Hasegawa H, Sato T, Kasai S, Adamowicz B, Hashizume T: Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures. Solar Energy 2006, 80: 629. 10.1016/j.solener.2005.10.014

2. Okumura T, En A, Eguchi K, Suhara M: Contactless characterization of surface and interface band-bending in Silicon-On-Insulator (SOI) structures. Mater Sci Eng B 2002, 91: 182. 10.1016/S0921-5107(01)00988-6

3. Takahashi H, Yoshida T, Mutoh M, Sakai T, Hasegawa H: In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement. Solid State Electron 1999, 43: 1561. 10.1016/S0038-1101(99)00104-5

4. Fumagalli L, Ferrari G, Sampietro M, Gomila G: Dielectric-constant measurement of thin insulating films at low frequency by nanoscale capacitance microscopy. Appl Phys Lett 2007, 91: 243110. 10.1063/1.2821119

5. Yoshida G, Nakashishi R, Kishino S: Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer. J Cryst Growth 2000, 210: 379. 10.1016/S0022-0248(99)00715-0

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