Contactless characterization of surface and interface band-bending in Silicon-On-Insulator (SOI) structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. J.P. Eggermont, D. Flandre, R. Gillon, J.P. Colinge, Proc. IEEE Int. SOI Conf., 1995, p. 127.
2. Method for Measuring Deep Levels in Thin Silicon‐on‐Insulator Layer Without Any Interface Effects
3. Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
4. Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials
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