In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement-Reference-Cited by-同舟云学术

In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement

Published:1999-08 Issue:8 Volume:43 Page:1561-1570
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Takahashi Hiroshi,Yoshida Toshiyuki,Mutoh Morimichi,Sakai Takamasa,Hasegawa Hideki

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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3. Noncontact, Electrode-free Capacitance/Voltage Measurement Based on General Theory of Metal-Oxide-Semiconductor (MOS) Structure

4. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

5. Properties of gallium arsenide. 2nd ed. An inspec publication, 1990

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