Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Characterization and Detection of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Local mapping of interface traps using contactless capacitance transient technique;AIP Advances;2016-10
3. Scanning tip measurement for identification of point defects;Nanoscale Research Letters;2011-02-14
4. Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method;Journal of Electronic Materials;2010-03-04
5. Preliminary study of a novel scanning charge-pumping method using extra gates for SOI wafer inspection;IEEE Electron Device Letters;2002-10
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