Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method-Reference-Cited by-同舟云学术

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

Published:2011-01-12 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Liu Jianming,Liu Xianlin,Li Chengming,Wei Hongyuan,Guo Yan,Jiao Chunmei,Li Zhiwei,Xu Xiaoqing,Song Huaping,Yang Shaoyan,Zhu Qinsen,Wang Zhanguo,Yang Anli,Yang Tieying,Wang Huanhua

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-69.pdf

Reference27 articles.

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2. Itoh N, Rhee JC, Kawabata T, Koike S: Study of cracking mechanism in GaN/α-Al 2 O 3 . J Appl Phys 1985, 58: 1828.

3. Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Palosz B, Porowski S, Pakula K, Baranowski JM, Barski A: Acta Phys Pol A. 1996, 90: 887.

4. Etzkorn EV, Clarke DR: Cracking of GaN films. J Appl Phys 2001, 89: 1025.

5. Liu JQ, Wang JF, Qiu YX, Guo X, Huang K, Zhang YM, Hu XJ, Xu Y, Xu K, Huang XH, Yang H: Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction. Semicond Sci Technol 2009, 24: 125007.

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