Growth of high resistance thick GaN templates by HVPE-Reference-Cited by-同舟云学术

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Growth of high resistance thick GaN templates by HVPE

Published:2005-04-11 Issue:7 Volume:2 Page:2091-2094
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Jain R. B.¹²,Fareed R. S. Q.¹,Zhang J.¹,Gaska R.¹,Kuokstis E.³,Yang J.²,Maruska H. P.²,Khan M. A.²,Mickevicius J.⁴,Tamulaitis G.⁴³,Shur M. S.¹⁴

Affiliation:

1. Sensor Electronic Technology, Inc., Columbia, SC 29209, USA

2. Department of EE, University of South Carolina, Columbia, SC 29208, USA

3. MTMI, Vilnius University, Vilnius, Lithuania

4. Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461545

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method;Nanoscale Research Letters;2011-01-12

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