Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers-Reference-Cited by-同舟云学术

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Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers

Published:1996-11 Issue:5 Volume:90 Page:887-890
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Leszczyński M.¹,Teisseyre H.¹,Suski T.¹,Grzegory I.¹,Boćkowski M.¹,Jun J.¹,Pałosz B.¹,Porowski S.¹,Pakuła K.²,Baranowski J.M.²,Barski A.³

Affiliation:

1. High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

2. Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

3. CEA-Grenoble, Departement de Recherche Fondamentale sur la Matiere Condensée SP2M, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Full optimization of quasiharmonic free energy with an anharmonic lattice model: Application to thermal expansion and pyroelectricity of wurtzite GaN and ZnO;Physical Review B;2023-04-26

2. Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates;CrystEngComm;2018

3. Thermal expansion of polycrystalline gallium nitride: an X-ray diffraction study;X-Ray Spectrometry;2015-07-03

4. Research progress of substrate materials used for GaN-Based light emitting diodes;Acta Physica Sinica;2014

5. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method;Nanoscale Research Letters;2011-01-12

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