Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Author:

Wang Guilei,Luo Jun,Qin Changliang,Liang Renrong,Xu Yefeng,Liu Jinbiao,Li Junfeng,Yin Huaxiang,Yan Jiang,Zhu Huilong,Xu Jun,Zhao Chao,Radamson Henry H.,Ye Tianchun

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference27 articles.

1. T Chiarella, L Witters, A Mercha, et al Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?[C]//ESSCIRC, 2009. ESSCIRC'09. Proceedings of IEEE. 2009;84–87.

2. Radamson HH, Thylen L (2014) Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements[M]. Academic Press.

3. Wang G L, Moeen M, Abedin A, et al (2013) Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)[J]. J Appl Phys 114(12):123511.

4. T Ghani, M Armstrong, C Auth, et al (2003) A 90 nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors[C]//Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International. IEEE: 11.6. 1-11.6. 3.

5. Thompson SE, Chau RS, Ghani T et al (2005) In search of “forever,” continued transistor scaling one new material at a time[J]. IEEE Trans Semicond Manuf 18(1):26–36

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