Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

Published:2017-04-21 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Chiu-Yen,Hong Yu-Chen,Ko Zong-Jie,Su Ya-Wen,Huang Jin-Hua

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2063-3.pdf

Reference26 articles.

1. Leong M, Doris B, Kedzierski J, Rim K, Yang M (2004) Silicon Device Scaling to the Sub-10-nm Regime. Science 306:2057–2060

2. Dayeh SA, Aplin DPR, Zhou X, Yu PKL, Yu ET, Wang D (2007) High Electron Mobility InAs Nanowire Field-Effect Transistors. Small 3:326–332

3. Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A (2009) Diameter-Dependent Electron Mobility of InAs Nanowires. Nano Lett 9:360–365

4. Chueh YL, Ford AC, Ho JC, Jacobson ZA, Fan Z, Chen CY, Chou LJ, Javey A (2008) Formation and characterization of NixInAs/InAs nanowire heterostructures by solid source reaction. Nano Lett 8:4528–4533

5. Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, Javey A (2010) Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature 468:286–289

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