Si doping-induced phase control, formation of p-type and n-type GaAs nanowires-Reference-Cited by-同舟云学术

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Si doping-induced phase control, formation of p-type and n-type GaAs nanowires

Published:2022-01 Issue: Volume:195 Page:110643
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kang Yubin,Tang Jilong,Azad Fahad,Zhu Xiaotian,Chen Xue,Chu Xueying,Wang Dengkui,Fang Xuan,Fang Dan,Lin Fengyuan,Li Kexue,Wang Xiaohua,Wei Zhipeng

Funder

Department of Science and Technology of Jilin Province

Changchun University of Science and Technology

Education Department of Jilin Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference45 articles.

1. A III–V nanowire channel on silicon for high-performance vertical transistors;Tomioka;Nature,2012

2. Enhanced photoresponsivity of a GaAs nanowire metal-semiconductor-metal photodetector by adjusting the fermi level;Chen;ACS Appl. Mater. Interfaces,2019

3. Enhancing performance of a GaAs/AlGaAs/GaAs nanowire photodetector based on the two-dimensional electron–hole tube structure;Zhu;Nano Lett.,2020

4. High-performance quasi-solid-state photoelectrochemical-type ultraviolet photodetector based on ZnO nanowire arrays;Xie;Vacuum,2019

5. Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates;Dimakis;Nano Lett.,2014

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1. Strain-induced modulation of the band structure of GaAs/GaSb/GaAs core-dual-shell nanowires;Vacuum;2024-10

2. New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD;Vacuum;2024-07

3. A systematic study on self-catalyzed growth of InAs/GaSb axial heterostructured nanowires by MOCVD;Vacuum;2024-02

4. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires;Physical Chemistry Chemical Physics;2023

5. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates;Vacuum;2022-07

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