Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?-Reference-Cited by-同舟云学术

Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?

Published:2019-06-16 Issue:7 Volume:19 Page:4498-4504
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hijazi Hadi¹^ORCID,Monier Guillaume¹^ORCID,Gil Evelyne¹,Trassoudaine Agnès¹,Bougerol Catherine²,Leroux Christine³,Castellucci Dominique¹,Robert-Goumet Christine¹,Hoggan Philip E.¹,André Yamina¹,Isik Goktas Nebile⁴,LaPierre Ray R.⁴^ORCID,Dubrovskii Vladimir G.⁵^ORCID

Affiliation:

1. Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France

2. Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble France

3. Université de Toulon, AMU, CNRS, IM2NP, CS 60584, Toulon Cedex 9, F-83041, France

4. Department of Engineering Physics, McMaster University, Hamilton, Ontario Canada, L8S4L7

5. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

Funder

Agence Nationale de la Recherche

Russian Science Foundation

European Regional Development Fund

Natural Sciences and Engineering Research Council of Canada

PIA the French governement IDEX-SITE initiative