Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Published:2019-01-31 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Gu Hong,Tian Feifei,Zhang Chunyu,Xu Ke,Wang Jiale,Chen Yong,Deng Xuanhua,Liu Xinke

Funder

National Key Research and Development Plan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-019-2872-7.pdf

Reference30 articles.

1. Del Alamo J, Joh J (2009) GaN HEMT reliability. Microelectron Reliab 49(9–11):1200–1206

2. Chowdhury S, Swenson BL, Wong MH et al (2013) Current status and scope of gallium nitride-based vertical transistors for high-power electronics application. Semicond Sci Technol 28(7):074014

3. Jones A, Wang F, Costinett D (2016) Review of commercial GaN power devices and GaN-based converter design challenges. IEEE Journal of Emerging and Selected topic in power electronics. 4:709-719

4. Liu X, Gu H, Li K et al (2017) AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer. AIP Adv 7:095305

5. Che J, Chu C, Tian K et al (2018) On the current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes. Nanoscale Res Lett 13:355

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