Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-018-2832-7.pdf
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3. Mastro MA, Kuramata A, Calkins J, Kim J, Ren F, Peartong SJ (2017) Opportunities and future directions for Ga2O3. ECS J Solid State Sc 6(5):356–359
4. Green AJ, Chabak KD, Heller ER, Fitch RC, Baldini M, Fiedler A, Irmscher K, Wagner G, Galazka Z, Tetlak SE, Crespo A, Leedy K, Jessen GH (2016) 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs. IEEE Electron Device Lett 37(7):902–905
5. Moser NA, McCandless JP, Crespo A, Leedy KD, Green AJ, Heller ER, Chabak KD, Peixoto N, Jessen GH (2017) High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge. Appl Phys Lett 110:143505
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