(Invited) Ultrawide Bandgap β-Ga2O3Thin Films: Growths, Properties and Devices
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The Electrochemical Society
Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Synthesis, phase conversion and physical characteristics of mesoporous β-Ga2O3 nanostructures for catalytic applications;Ceramics International;2024-02
2. Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3;Applied Physics Letters;2024-01-08
3. Comprehensive study of formaldehyde gas sensing performance of a GTO thin film incorporated with gold nanoparticles;Sensors and Actuators B: Chemical;2024-01
4. Low resistance Ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices;Surfaces and Interfaces;2024-01
5. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications;Materials;2023-12-18
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