On the switching dynamics of epitaxial ferroelectric CeO2–HfO2 thin film capacitors
-
Published:2022-12-14
Issue:1
Volume:9
Page:
-
ISSN:2196-5404
-
Container-title:Nano Convergence
-
language:en
-
Short-container-title:Nano Convergence
Author:
Cüppers FelixORCID, Hirai Koji, Funakubo Hiroshi
Abstract
AbstractEpitaxial layers of ferroelectric orthorhombic HfO2 are frequently investigated as model systems for industrially more relevant polycrystalline films. The recent success in stabilizing the orthorhombic phase in the solid-solution cerium oxide – hafnium oxide system allows detailed investigations of external influences during fabrication. This report analyzes the ferroelectric properties of two thin film capacitors, which were post-deposition annealed in N2 and O2 atmospheres to achieve the orthorhombic phase after room temperature deposition. The samples, which exhibit very similar constituent phase, appear identical in conventional polarization-field hysteresis measurements. However, a significant switching speed difference is observed in pristine devices. Continued field cycling reduces the difference. Deeper analysis of switching transients based on the Nucleation Limited Switching model suggests that the O2 heat treatment atmosphere results in an altered oxygen vacancy profile, which is reverted during ferroelectric cycling.
Funder
MEXT Elements Strategy Initiative to Form Core Research Center MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers Japan Society for the Promotion of Science London
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Reference71 articles.
1. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hatttendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pei, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Schifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki, “A 45nm logic technology with high-k plus metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging,” 2007 IEEE International Electron Devices Meeting, Vols 1 and 2, pp. 247 (2007) 2. D. Spassov, A. Paskaleva, T.A. Krajewski, E. Guziewicz, G. Luka, T. Ivanov, Al2O3/HfO2 multilayer High-k Dielectric Stacks for Charge Trapping Flash Memories. Phys. Status Solidi A-Appl. Mat. 215, 1–8 (2018) 3. T.S. Boescke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroeder, S. Kudelka, P.D. Kirsch, C. Krug, P.Y. Hung, S.C. Song, B.S. Ju, J. Price, G. Pant, B.E. Gnade, W. Krautschneider, B. Lee, R. Jammy, “Tetragonal phase stabilization by doping as an enabler of thermally stable HfO2 based MIM and MIS capacitors for sub 50 nm deep trench DRAM,” 2006 International Electron Devices Meeting, Vols 1 and 2, pp. 934+ (2006) 4. F. Cüppers, S. Menzel, C. Bengel, A. Hardtdegen, M. von Witzleben, U. Böttger, R. Waser, S. Hoffmann-Eifert, Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior. APL Mater 7, 1–9 (2019) 5. B. Govoreanu, G.S. Kar, Y.-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I.P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D.J. Wouters, J.A. Kittl, M. Jurczak, “10x10 nm2 Hf/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation,” IEDM Tech. Dig pp. 31.6.1–31.6.4 (2011)
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|