Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
Author:
Affiliation:
1. Peter Grünberg Institute 7 & 10, Forschungszentrum Jülich GmbH and JARA-Fit, 52425 Jülich, Germany
2. Institute of Materials in Electrical Engineering and Information Technology II and JARA-Fit, RWTH Aachen University, 52062 Aachen, Germany
Funder
Deutsche Forschungsgemeinschaft
Horizon 2020 Framework Programme
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5108654
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