X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/1.1371383.pdf
Reference13 articles.
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2. The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy;Journal of Crystal Growth;2010-05
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